Ion Implantation Technology–92 by D.F. Downey, M. Farley, K.S. Jones and G. Ryding (Eds.)

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By D.F. Downey, M. Farley, K.S. Jones and G. Ryding (Eds.)

Ion implantation expertise has made a huge contribution to the complex in built-in circuit know-how because the early Nineteen Seventies. the ubiquitous desire for actual versions in ion implanted species turns into very important sooner or later because of shrinking function sizes. profitable broad program of ion implantation, in addition to exploitation of newly pointed out possibilities, would require the advance of entire implant versions. The 141 papers (including 24 invited papers) during this quantity tackle the latest advancements during this box. the results for ion implantation expertise, in addition to extra observations of wishes and possibilities are mentioned. the amount will be of worth to all people who are attracted to buying a extra whole realizing of the present advancements in ion implantation approaches and entire implant types

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Beam profiles of the converged ion beams Beam profiles of the converged ion beams were measured. Fig. 5 shows the typical profile of the con— E o A u from 1-point (with neighboring cusps) Ü LU GC Q LU -1 -2 -I LU £-4 2 1 1 -4 (a) PERPENDICULAR DIRECTION (cm) ί -4-2 (b) 0 2 4 PERPENDICULAR DIRECTION (cm) Fig. 2. Beam profiles of the ion sources shown in fig. 1. (a) Ion current density contour lines for the single-emission-point source and (b) those for the source presented in fig. lb. Y. Gotoh et al.

Q_0_Q Q_0_0 10 20 30 40 Ω 50 Depth (μηη) Fig. 8. 5 X1012 ions/cm2 followed by a thermal process at 970°C for 5 h. The dashed line in (b) represents the resistivity of the epitaxial layer of undoped wafer. IV. MATERIALS SCIENCE 52 S. Coffa et al. / Diffusion and lifetime engineering in Si The impurity distributions in the epitaxial layer of these devices are reported in fig. 8a. For Au plated sample the concentration profile is strongly depth dependent and high Au concentration values are measured close to the wafer surface.

Close to these surfaces, the diffusion occurs at a rate only determined by the influx of Au interstitial atoms and is faster than vertical diffusion which is controlled instead by the outflux of Si self-interstitials. However, in the same region, the 49 net transport of Ax is reduced. In fact the metal atoms spend most of their time in substitutional sites where they are virtually immobile. The interstitial metal atoms, traveling from the diffusion source to the back surface, pass through the bulk of the wafer where a strong supersaturation of self-interstitials is present.

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