By H. H. Wieder
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Again, the film smoothness and uniformity were found to de pend mainly on the initial surface preparation and on the cleanliness of the substrate wafer. 1 O Q. 95 LOO lO^/SOURCE TEMPERATURE FIO. 4. D e p o s i t i o n rate o f G a P as a function o f source temperature for a constant initial H C l pressure o f 2 4 0 torr [after M o e s t a n d Shupp ( 1 9 6 2 ; 9 ) ] . Moest (1965; 13) has described specific operational conditions using the apparatus described above. GaAs films (w-type) were grown to a thickness of 4 ^m on a Sn-doped, (lll)-oriented GaAs substrate.
The melting point of the composite (InSb + In) films was estimated to be 496°C. Without an In overcoating, InSb films held at a temperature of 480 °C in vacuum for 2 to 3 min evaporate completely, or lose most of their Sb con tent by dissociation. The excess In in the liquid film causes two distinct phases to be present during recrystallization. One phase is solid crystalline dendritic InSb, the P R E P A R A T I O N OF III-V C O M P O U N D L A Y E R S 29 second is a non-stoichiometric (In + Sb) liquid.
3. M o l a r flow ratew^x of either vapor p h a s e c o m p o n e n t as a function'of the normalized temperature Γ„, for an open-tube transport reaction, eq. 12), with ^4 as a parameter (numbers represent values o f k^) a n d ^2 = 1. 0 F i G . 4. N u m b e r o f m o l e s o f solid, ΛΑΒ as a function o f the normalized temperature 7 ; with k2 = I and ^4 as a parameter of each curve. 36 I N T E R M E T A L L I C S E M I C O N D U C T I N G FILMS etching occurs for all temperatures when heating, as shown in Figs.