Intermetallic Semiconducting Films by H. H. Wieder

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Again, the film smoothness and uniformity were found to de­ pend mainly on the initial surface preparation and on the cleanliness of the substrate wafer. 1 O Q. 95 LOO lO^/SOURCE TEMPERATURE FIO. 4. D e p o s i t i o n rate o f G a P as a function o f source temperature for a constant initial H C l pressure o f 2 4 0 torr [after M o e s t a n d Shupp ( 1 9 6 2 ; 9 ) ] . Moest (1965; 13) has described specific operational conditions using the apparatus described above. GaAs films (w-type) were grown to a thickness of 4 ^m on a Sn-doped, (lll)-oriented GaAs substrate.

The melting point of the composite (InSb + In) films was estimated to be 496°C. Without an In overcoating, InSb films held at a temperature of 480 °C in vacuum for 2 to 3 min evaporate completely, or lose most of their Sb con­ tent by dissociation. The excess In in the liquid film causes two distinct phases to be present during recrystallization. One phase is solid crystalline dendritic InSb, the P R E P A R A T I O N OF III-V C O M P O U N D L A Y E R S 29 second is a non-stoichiometric (In + Sb) liquid.

3. M o l a r flow ratew^x of either vapor p h a s e c o m p o n e n t as a function'of the normalized temperature Γ„, for an open-tube transport reaction, eq. 12), with ^4 as a parameter (numbers represent values o f k^) a n d ^2 = 1. 0 F i G . 4. N u m b e r o f m o l e s o f solid, ΛΑΒ as a function o f the normalized temperature 7 ; with k2 = I and ^4 as a parameter of each curve. 36 I N T E R M E T A L L I C S E M I C O N D U C T I N G FILMS etching occurs for all temperatures when heating, as shown in Figs.

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