By V. Ramanarayanan
Read Online or Download Course Material on Switched Mode Power Conversion (2nd Edition) PDF
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Extra resources for Course Material on Switched Mode Power Conversion (2nd Edition)
IGCT must have an external di/dt snubber. IGBT can limit di/dt via gate control. 25: di/dt Snubber for the IGCT Fig. 25. The IGCT can be turned on like a GTO with relatively low gate current. Then it is subject to the same di/dt limitations as a thyristor. It can also be turned on like a transistor, when the NPN transistor is driven hard. In such a case, the device has an order of magnitude better di/dt capability. Typically a hard turn-on IGCT exhibits a monotonically falling anode voltage, compared to a soft turn-on IGCT that exhibits an oscillatory drop in anode voltage during turn on.
The diode does not have explicit control inputs. It reaches the ON state with a small delay (tr ) when the device is forward biased. It blocks to the OFF state after a small delay (trr ) when the forward current goes to zero. tr = forward recovery time trr = reverse recovery time The forward recovery time is much less than the reverse recovery time. 5 Diodes 7 During the reverse recovery time a negative current flows through the device to supply the reverse charge required to block reverse voltage across the junction.
5 J 12-20 J 9 J at 6 µF 9J 10J 20 - 30 J • PJdt = Heat generated in the junction in time dt • msdθj = Heat retained in the junction in time dt • m = mass of the semiconductor material in Kg • s = specific heat of the junction material Cal/Kg/◦ C. 3) J dt J For the purpose of simple analysis we may assume that the case temperature θc (t) to be constant at θc (we will see how to achieve this later). We may further define a new variable as the temperature difference between the junction and the case θjr (t).